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1991 | 79 | 2-3 | 281-285
Article title

Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect

Content
Title variants
Languages of publication
EN
Abstracts
EN
A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10^{7} Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V_{t}h which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V_{t}h increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.
Keywords
EN
Year
Volume
79
Issue
2-3
Pages
281-285
Physical description
Dates
published
1991-02
received
1990-08-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z229kz
Identifiers
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