Passivation of a Bulk Defect E_{c}-0.22 eV in GaAs by Contact with Phosphoric Acid

• Authors: A. Babiński , E. Gołdys
• Languages of publication: EN

Abstracts

EN

The E_{c}-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E_{c}-0.22 eV trap passivation are proposed.

Keywords

EN

61.70.At; 81.60.Cp; 71.55.Eq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 277-280

Dates

published

1991-02

received

1990-08-08

Contributors

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

E. Gołdys

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland