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Number of results
1991 | 79 | 2-3 | 277-280
Article title

Passivation of a Bulk Defect E_{c}-0.22 eV in GaAs by Contact with Phosphoric Acid

Content
Title variants
Languages of publication
EN
Abstracts
EN
The E_{c}-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E_{c}-0.22 eV trap passivation are proposed.
Keywords
EN
Year
Volume
79
Issue
2-3
Pages
277-280
Physical description
Dates
published
1991-02
received
1990-08-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z228kz
Identifiers
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