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Number of results
1991 | 79 | 2-3 | 271-275

Article title

On DLTS Experiments with Extended Defects

Content

Title variants

Languages of publication

EN

Abstracts

EN
It is shown that the line shape of DLTS spectra measured in silicon with a high concentration of extended defects can be consistently explained if the both processes, thermal emission and tunneling of majority carriers from charged defects, are taken into account.

Keywords

EN

Year

Volume

79

Issue

2-3

Pages

271-275

Physical description

Dates

published
1991-02
received
1990-08-08

Contributors

  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv79z227kz
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