On DLTS Experiments with Extended Defects

• Authors: Wiktor Szkiełko
• Languages of publication: EN

Abstracts

EN

It is shown that the line shape of DLTS spectra measured in silicon with a high concentration of extended defects can be consistently explained if the both processes, thermal emission and tunneling of majority carriers from charged defects, are taken into account.

Keywords

EN

71.55.-i  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 271-275

Dates

published

1991-02

received

1990-08-08