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1991 | 79 | 2-3 | 271-275
Article title

On DLTS Experiments with Extended Defects

Content
Title variants
Languages of publication
EN
Abstracts
EN
It is shown that the line shape of DLTS spectra measured in silicon with a high concentration of extended defects can be consistently explained if the both processes, thermal emission and tunneling of majority carriers from charged defects, are taken into account.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
271-275
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z227kz
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