On DLTS Experiments with Extended Defects

Szkiełko, Wiktor

Journal

Acta Physica Polonica A

1991 | 79 | 2-3 | 271-275

Article title

On DLTS Experiments with Extended Defects

Authors

Wiktor Szkiełko

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/79/a079z2p27.pdf [remote]

Title variants

Languages of publication

Abstracts

It is shown that the line shape of DLTS spectra measured in silicon with a high concentration of extended defects can be consistently explained if the both processes, thermal emission and tunneling of majority carriers from charged defects, are taken into account.

Keywords

71.55.-i

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1991

Volume

Issue

2-3

Pages

271-275

Physical description

Dates

published

1991-02

received

1990-08-08

Contributors

author

Wiktor Szkiełko

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv79z227kz