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1991 | 79 | 2-3 | 267-270
Article title

Light Induced Recovery of EL2 Defect from the Metastable Configuration

Content
Title variants
Languages of publication
EN
Abstracts
EN
The measurements: of changes in a magnitude of ΕL2 characteristic infrared absorption were used to investigate a phenomenon of light induced recovery of the defect from its metastable state in semi-insulating (SI) and n-type GaAs. At a temperature of 12K illumination with photons of energy 1.45 eV caused partial recovery for both SI and n-type samples. For n-type samples partial recovery occurred also after irradiation with photons of energy lower than 0.73 eV.
Keywords
EN
Year
Volume
79
Issue
2-3
Pages
267-270
Physical description
Dates
published
1991-02
received
1990-08-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z226kz
Identifiers
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