Light Induced Recovery of EL2 Defect from the Metastable Configuration
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The measurements: of changes in a magnitude of ΕL2 characteristic infrared absorption were used to investigate a phenomenon of light induced recovery of the defect from its metastable state in semi-insulating (SI) and n-type GaAs. At a temperature of 12K illumination with photons of energy 1.45 eV caused partial recovery for both SI and n-type samples. For n-type samples partial recovery occurred also after irradiation with photons of energy lower than 0.73 eV.
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