Detection of Persisting Photoelectrons in AlGaAs Double Heterostructure Laser Diodes by DLTS

• Authors: S. Brehme
• Languages of publication: EN

Abstracts

EN

LPE-made AlGaAs double heterostructure laser diodes having a Sn-doped n-type confinement layer were investigated. A significant change of the low-temperature part of DLTS spectra and C(T) curves was observed after applying forward or higher reverse voltage. Relaxation of the curves took several hours. This persistent photoconductivity phenomenon is explained by photoionization of the DX centres.

Keywords

EN

71.55.Eq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 239-242

Dates

published

1991-02

received

1990-08-08

Contributors

author

S. Brehme

• Central Institute of Electron Physics, Academy of Science of GDR, Hausvogteiplatz 5-7, Berlin 1086, Germany