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1991 | 79 | 2-3 | 239-242
Article title

Detection of Persisting Photoelectrons in AlGaAs Double Heterostructure Laser Diodes by DLTS

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Content
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Languages of publication
EN
Abstracts
EN
LPE-made AlGaAs double heterostructure laser diodes having a Sn-doped n-type confinement layer were investigated. A significant change of the low-temperature part of DLTS spectra and C(T) curves was observed after applying forward or higher reverse voltage. Relaxation of the curves took several hours. This persistent photoconductivity phenomenon is explained by photoionization of the DX centres.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
239-242
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Central Institute of Electron Physics, Academy of Science of GDR, Hausvogteiplatz 5-7, Berlin 1086, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z219kz
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