Amorphous Hydrogenated Silicon Films Studied by Schottky Barrier Method

• Authors: A. Kołodziej , T. Pisarkiewicz
• Languages of publication: EN

Abstracts

EN

The problem of the effective ohmic junction and the question of the barrier height for thin film structures of Al/a-Si:H/n^{+}c-Si/Al and Al/a-Si:H/n^{+}c-Si/Mo are studied. Current-voltage and temperature characteristics were measured and possible mechanisms of conductivity were extracted and discussed.

Keywords

EN

72.80.Ng

Discipline

• 72.80.Ng: Disordered solids

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 229-234

Dates

published

1991-02

Contributors

author

A. Kołodziej

• Academy of Mining and Metallurgy, Institute of Electronics, al.Mickiewicza 30, 30-059 Kraków, Poland

author

T. Pisarkiewicz

• Academy of Mining and Metallurgy, Institute of Electronics, al.Mickiewicza 30, 30-059 Kraków, Poland

Identifiers

DOI

10.12693/APhysPolA.79.229