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1991 | 79 | 2-3 | 229-234
Article title

Amorphous Hydrogenated Silicon Films Studied by Schottky Barrier Method

Content
Title variants
Languages of publication
EN
Abstracts
EN
The problem of the effective ohmic junction and the question of the barrier height for thin film structures of Al/a-Si:H/n^{+}c-Si/Al and Al/a-Si:H/n^{+}c-Si/Mo are studied. Current-voltage and temperature characteristics were measured and possible mechanisms of conductivity were extracted and discussed.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
229-234
Physical description
Dates
published
1991-02
Contributors
author
  • Academy of Mining and Metallurgy, Institute of Electronics, al.Mickiewicza 30, 30-059 Kraków, Poland
  • Academy of Mining and Metallurgy, Institute of Electronics, al.Mickiewicza 30, 30-059 Kraków, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z217kz
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