Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering

• Authors: W. Bała , M. Drozdowski , M. Kozielski
• Languages of publication: EN

Abstracts

EN

The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.

Keywords

EN

78.30.Hv; 61.70.Wp

Discipline

• 78.30.Hv: Other nonmetallic inorganics

• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 225-228

Dates

published

1991-02

received

1990-08-08

Contributors

author

W. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

author

M. Drozdowski

• Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland

author

M. Kozielski

• Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland

Identifiers

DOI

10.12693/APhysPolA.79.225