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1991 | 79 | 2-3 | 225-228
Article title

Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering

Content
Title variants
Languages of publication
EN
Abstracts
EN
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
225-228
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z216kz
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