Electrical Properties of Hydrogenated Amorphous Si_{1-x}Ge_{x} Thin Films

• Authors: T. Pisarkiewicz , T. Stapiński , A. Kołodziej
• Languages of publication: EN

Abstracts

EN

Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H_{2} gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism.

Keywords

EN

72.80.Ng; 72.40.+w; 73.60.Gx

Discipline

• 72.80.Ng: Disordered solids
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 203-206

Dates

published

1991-02

received

1990-08-08

Contributors

author

T. Pisarkiewicz

• Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland

author

T. Stapiński

• Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland

author

A. Kołodziej

• Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland

Identifiers

DOI

10.12693/APhysPolA.79.203