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1991 | 79 | 2-3 | 203-206
Article title

Electrical Properties of Hydrogenated Amorphous Si_{1-x}Ge_{x} Thin Films

Content
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Languages of publication
EN
Abstracts
EN
Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H_{2} gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
203-206
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
  • Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z211kz
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