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1991 | 79 | 2-3 | 195-198
Article title

GaAlAs Allox/Pseudoalloy Type II Structures

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EN
Abstracts
EN
The existence of type-II structures made from the combination of Ga_{1-x}AI_{x}As alloy and a short period GaAs/AlAs type-I superlattice is presented. Such three material structures are of type-II having at the same time electrons and holes of Γ-symmetry. This contrasts with the usual situation in type-II two material GaAs/AlAs structure where the ground state of electrons is of X-symmetry. The mechanism allowing creation of three material type-II structures is based on the difference of effective masses of electrons and holes. It should be valid for all similar semiconductor systems. Experimental results of photoluminescence and photoluminescence excitation studies of such structures made by Molecular Beam Epitaxy are presented. We determine the mutual positions of the electron and hole ground levels in the alloy and pseudoalloy and confirm that the studied structure is of type-II.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
195-198
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av.Henri Ravera, 92220 Bagneux, France
author
  • Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av.Henri Ravera, 92220 Bagneux, France
author
  • Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av.Henri Ravera, 92220 Bagneux, France
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z209kz
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