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1991 | 79 | 2-3 | 179-182
Article title

Electrical Properties of Au/n-GaAs_{1-x}Sb_{x} Contacts

Content
Title variants
Languages of publication
EN
Abstracts
EN
The Schottky barrier heights of Au on n-type GaAs_{1-x}Sb_{x} were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
179-182
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z205kz
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