Electrical Characteristics of Metal/p-type CdTe Schottky Contacts

• Authors: J. Szatkowski , K. Sierański , J. Kasprzak
• Languages of publication: EN

Abstracts

EN

The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured with I-V techniques. The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.

Keywords

EN

72.80.Ey; 73.40.Ei

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.40.Ei: Rectification

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 175-178

Dates

published

1991-02

received

1990-08-08

Contributors

author

J. Szatkowski

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

K. Sierański

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Kasprzak

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Identifiers

DOI

10.12693/APhysPolA.79.175