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1991 | 79 | 2-3 | 167-170
Article title

New Electrical characterization of the Metal-Semiconductor Interface in GaAs Schottky Junctions

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
The new possibilities of the electrical characterization of the metal-semiconductor interface in Schottky junctions are briefly outlined and demonstrated by using an example of experimental results taken from the literature. The interface parameters obtained for GaAs Schottky junctions with different metallizations are summarized.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
167-170
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
  • Research Institute for Technical Physics, Hungarian Academy of Sciences, Budapest, P.O.Box 76, H-1325, Hungary
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z202kz
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