Analitic Properties and Self-Consistency in a Schottky Barrier Model
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We apply a one-dimensional model to studies of intrinsic Schottky barriers. The semiconductor possesses two bands (s and p) and the metal has one conduction band. For the first time explicitly analytic formula for the density of states is given. An extremely accurate analytic formula (compared to numerical results) for the Fermi level position is proposed. It is shown that the Fermi level of the (covalent) semiconductor-metal interface is independent of the metal bulk parameters. Also self-consistent numerical results are presented.
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