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1991 | 79 | 2-3 | 161-165
Article title

Analitic Properties and Self-Consistency in a Schottky Barrier Model

Content
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Languages of publication
EN
Abstracts
EN
We apply a one-dimensional model to studies of intrinsic Schottky barriers. The semiconductor possesses two bands (s and p) and the metal has one conduction band. For the first time explicitly analytic formula for the density of states is given. An extremely accurate analytic formula (compared to numerical results) for the Fermi level position is proposed. It is shown that the Fermi level of the (covalent) semiconductor-metal interface is independent of the metal bulk parameters. Also self-consistent numerical results are presented.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
161-165
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Department of Physics, Jagiellonian University, ul. Reymonta 4, 30-059 Kraków, Poland
author
  • Department of Physics, Jagiellonian University, ul. Reymonta 4, 30-059 Kraków, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z201kz
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