Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs

• Authors: K. Karpierz , M. Sadowski
• Languages of publication: EN

Abstracts

EN

The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p_{+1} transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.

Keywords

EN

72.40.+w; 78.20.ls; 78.50.Ec; 78.50.Ge

Discipline

• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 1
• Pages: 121-124

Dates

published

1991-01

received

1990-08-08

Contributors

author

K. Karpierz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Sadowski

• High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.79.121