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1991 | 79 | 1 | 121-124
Article title

Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs

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Languages of publication
EN
Abstracts
EN
The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p_{+1} transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.
Keywords
Publisher

Year
Volume
79
Issue
1
Pages
121-124
Physical description
Dates
published
1991-01
received
1990-08-08
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z110kz
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