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1991 | 79 | 1 | 49-58
Article title

Spatial Correlation of Impurity Charges Induced by Coulomb Interactions - Application to DX Centers in GaAs

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EN
Abstracts
EN
The electron mobility enhancement observed in heavily doped GaAs under hydrostatic pressure is interpreted in terms of spatial correlation between the donor charges within partially occupied system of impurities induced by strong inter-donor Coulomb interaction. A simple analytic theory is given for both DX^{0} and DX^{-} models of the impurity state. The mobility is shown to increase together with pressure in both models. Estimates of the energy of the DX level are strongly perturbed by the inter-donor Coulomb interactions.
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EN
Publisher

Year
Volume
79
Issue
1
Pages
49-58
Physical description
Dates
published
1991-01
received
1990-08-08
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z104kz
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