PL EN


Preferences help
enabled [disable] Abstract
Number of results
1991 | 79 | 1 | 15-29
Article title

Semi-Insulating Transition Metal-Doped III-V Materials

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
This review surveys the properties of transition metal (TM) doped semi-insulating (SI) III-V semiconductors. After a general definition of a SI material, a simple model of a SI crystal with a midgap donor and shallow impurities is discussed. A short history, main properties, and thermal stability problems of SI Cr-doped GaAs are presented. The puzzling problem of SI V-doped GaAs is explained. Several dopants (Cr, Fe, Co, and Ti) in SI InP are discussed in terms of the resistivities obtained, as well as thermal stability. Finally, GaP and GaInAs high resistivity systems are considered.
Keywords
EN
Publisher

Year
Volume
79
Issue
1
Pages
15-29
Physical description
Dates
published
1991-01
received
1990-08-08
Contributors
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z102kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.