Semi-Insulating Transition Metal-Doped III-V Materials

• Authors: Andrzej Hennel
• Languages of publication: EN

Abstracts

EN

This review surveys the properties of transition metal (TM) doped semi-insulating (SI) III-V semiconductors. After a general definition of a SI material, a simple model of a SI crystal with a midgap donor and shallow impurities is discussed. A short history, main properties, and thermal stability problems of SI Cr-doped GaAs are presented. The puzzling problem of SI V-doped GaAs is explained. Several dopants (Cr, Fe, Co, and Ti) in SI InP are discussed in terms of the resistivities obtained, as well as thermal stability. Finally, GaP and GaInAs high resistivity systems are considered.

Keywords

EN

71.55.Eq   72.80.Ey   81.60.Cp  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 1
• Pages: 15-29

Dates

published

1991-01

received

1990-08-08

Identifiers

DOI

10.12693/APhysPolA.79.15