Optical Properties of GGG Epitaxial Films Grown from PbO-B₂O₃-V₂O₅ Flux

• Authors: I. Syvorotka , D. Sugak , A. Luchechko , Ya. Zhydachevskyy , S. Ubizskii
• Languages of publication: EN

Abstracts

EN

The paper reports a growth of the high-quality Gd₃Ga₅O₁₂ (GGG) homoepitaxial films by the liquid phase epitaxy technique using the PbO-B₂O₃ and PbO-B₂O₃-V₂O₅ fluxes. The influence of the flux composition containing V₂O₅ as well as the growth temperature is discussed basing on the optical absorption and the electron probe micro analysis results.

Keywords

EN

81.15.Lm; 78.66.Nk

Discipline

• 78.66.Nk: Insulators
• 81.15.Lm: Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 4
• Pages: 954-958

Dates

published

2018-04

Contributors

author

I. Syvorotka

• Scientific Research Company "Carat", Lviv, Ukraine
• Lviv Polytechnic National University, Lviv, Ukraine

author

D. Sugak

• Scientific Research Company "Carat", Lviv, Ukraine
• Lviv Polytechnic National University, Lviv, Ukraine

author

A. Luchechko

• Ivan Franko National University of Lviv, Lviv, Ukraine

author

Ya. Zhydachevskyy

• Lviv Polytechnic National University, Lviv, Ukraine
• Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

author

S. Ubizskii

• Lviv Polytechnic National University, Lviv, Ukraine

References

• [1] E.A. Giess, M.M. Faktor, R. Ghez, C.F. Guerci, J. Cryst. Growth 56, 576 (1982) , doi: 10.1016/0022-0248(82)90040-9
• [2] G.A. Bufetova, M.Yu. Gusev, I.A. Ivanov, N.S. Neustroev, D.A. Nikolaev, V.F. Seregin, V.B. Tsvetkov, I.A. Shcherbakov, Phys. Wave Phenom. 17, 77 (2009) , doi: 10.3103/S1541308X09020010
• [3] G.B. Scott, J.L. Page, J. Appl. Phys. 48, 1342 (1977) , doi: 10.1063/1.323728
• [4] A. Matkovskii, P. Potera, D. Sugak, L. Grigorjeva, D. Millers, V. Pankratov, A. Suchocki, Cryst. Res. Technol. 39, 788 (2004) , doi: 10.1002/crat.200310254
• [5] V.V. Randoshkin, N.V. Vasil'eva, V.G. Plotnichenko, Yu.N. Pyrkov, S.V. Lavrishchev, M.A. Ivanov, A.A. Kiryukhin, A.M. Saletskii, N.N. Sysoev, Phys. Solid State 46, 1030 (2004) , doi: 10.1134/1.1767239
• [6] V.V. Randoshkin, N.V. Vasil'eva, A.V. Vasil'ev, V.G. Plotnichenko, S.V. Lavrishchev, A.M. Saletskii, K.V. Stashun, N.N. Sysoev, A.N. Churkin, Phys. Solid State 43, 1659 (2001) , doi: 10.1134/1.1402220
• [7] N.V. Vasil'eva, V.V. Randoshkin, V.G. Plotnichenko, Yu.N. Pyrkov, V.V. Voronov, A.M. Galstyan, N.N. Sysoev, Inorg. Mater. 44, 76 (2008) , doi: 10.1134/S0020168508010135

Identifiers

DOI

10.12693/APhysPolA.131.954