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Abstracts
Thermally stimulated luminescence of X-ray irradiated β -Ga₂O₃ thin films was investigated. An analysis of the form of the elementary contours making the thermally stimulated luminescence curves shows that recombination processes at the thermally stimulated luminescence peaks with maxima at 77, 135, 178, and 235 K in thin films of β -Ga₂O₃ are described in terms of linear kinetics. The spectral composition of the thermally stimulated luminescence of the thin films was studied. Some methods are employed to determine the activation energies and frequency factors corresponding to the thermally stimulated luminescence peaks. It is established that the recombination processes occurring upon release of the trapping centers in thin films β -Ga₂O₃ are conditioned by diffusion-controlled tunneling recombination due to thermally-stimulated migration of V_{k}-centers.
Discipline
- 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
- 68.37.Ps: Atomic force microscopy (AFM)
- 78.60.-b: Other luminescence and radiative recombination
Journal
Year
Volume
Issue
Pages
910-913
Physical description
Dates
published
2018-04
Contributors
author
- Ivan Franko National University of L'viv, Dragomanova Str. 50, 79005, Lviv, Ukraine
author
- Ivan Franko National University of L'viv, Dragomanova Str. 50, 79005, Lviv, Ukraine
author
- Ivan Franko National University of L'viv, Dragomanova Str. 50, 79005, Lviv, Ukraine
author
- Ivan Franko National University of L'viv, Dragomanova Str. 50, 79005, Lviv, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv133n4p35kz