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The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
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Volume
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Pages
907-909
Physical description
Dates
published
2018-04
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warsaw, Poland
author
- School of Engineering, Cardiff University, Cardiff, CF24 3AA, United Kingdom
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warsaw, Poland
author
- National Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Swierk, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warsaw, Poland
References
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv133n4p34kz