Comparison of Electrical Performances of Power Electronics Switches and an Effective Switch Selection Algorithm

• Authors: H. Zenk
• Languages of publication: EN

Abstracts

EN

Electronics switches commonly used in power electronics circuits are the part of the electronics system depending on energy efficiency, circuit topology, switching matrix design, interaction with filter elements, and many other parameters. For the first new switch design prototype to identify of electrical efficiency of the semiconductor switch working with a system, it is very important that estimation of the variables saves time, labor, and economical resources. In this study, the new algorithm is proposed and applied to circuit estimate efficiency of power electronics switches. The current-voltage-power capacities, switching rate, power losses, physical dimensions, heating levels of power electronics switches used in the circuit are investigated and algorithmically estimated according to the result of experimental performance switches.

Keywords

EN

power electronics switches (PES); switch selection algorithm (SSA); IGBT; MOSFET; BJT; diode

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 4
• Pages: 897-901

Dates

published

2018-04

Contributors

author

H. Zenk

• Giresun University, Engineering Faculty, Department of Electrics and Electronics, 28200 Giresun, Turkey

References

• [1] M.H. Rashid, Power Electronics Handbook, 2nd ed., Academic Press, New York 2007
• [2] N. Mohan, T.M. Undeland, W.P. Robbins, Power Electronics Converters, Applications and Design, Wiley, New York 1995
• [3] Z. Özkan, A.M. Hava, in: ELECO '2012 International Conference on Electrical and Electronics Engineering, Chamber of Electrical Engineers (EMO), Bursa 2012, p. 460 http://emo.org.tr/ekler/b7c9d960a57c6c7_ek.pdf
• [4] K.J. Um, Application Note 9020 IGBT Basic II, Fairchild, Semiconductor Components Industries, LLC, April 2002 http://fairchildsemi.com/application-notes/AN/AN-9020.pdf
• [5] D. Graovac, M. Pürschel, IGBT Power Losses Calculation Using the Data-Sheet Parameters, Infineon Application Note, Automotive Power, V1.1, January 2009 http://scribd.com/document/34307806/IGBT-Power-Losses-Calculation-Using-the-Data-Sheet-Parameters
• [6] IXXK100N60C3H1 Semiconductor Datasheet http://ixapps.ixys.com/DataSheet/DS100283B(IXXK-X100N60C3H1).pdf
• [7] D. Graovac, M. Pürschel, A. Kiep, MOSFET Power Losses Calculation Using the Data-Sheet Parameters, Infenion Application Note, V1.1, 2006 http://application-notes.digchip.com/070/70-41484.pdf
• [8] J. Klein, AN-6005 Synchronous buck MOSFET loss calculations with Excel model, Fairchild Application Note http://fairchildsemi.com/an/AN/AN-6005.pdf
• [9] FCA76N60N N-Channel SupreMOS MOSFET, Fairchild, Semiconductor Components Industries, May 2014 http://fairchildsemi.com/ds/FC/FCA76N60N.pdf

Identifiers

DOI

10.12693/APhysPolA.131.897