Effect of RF Magnetron Sputtered Nickel Oxide Thin Films as an Anode Buffer Layer in a P₃HT:PCBM Bulk Hetero-Junction Solar Cells

• Authors: Jwayeon Kim , Yongkyu Ko , Kyeongsoon Park
• Languages of publication: EN

Abstracts

EN

Bulk heterojunction solar cells were investigated using poly(3-hexylthiophene) (P₃HT):[6,6]-phenyl-C₆₁ butyric acid methyl ester (PCBM) with a nickel oxide (NiO) anode buffer layer between the photoactive layer and an indium tin oxide (ITO) anode layer. The NiO anode buffer layer was deposited using radio frequency magnetron sputtering on an ITO electrode layer for effective hole transport and electron blocking. The NiO film is a p-type semiconductor with resistivity of 0.35 Ω cm. The power conversion efficiency was improved substantially by the NiO anode buffer layer compared to a solar cell with an anode buffer layer made from poly(3,4-ethylenedioxythiophene) (PEDOT):poly(styrene sulfonate) (PSS). The solar cell with a 10 nm thick NiO anode buffer layer had a power conversion efficiency of 4.71%. These results are explained by the improved charge transport across the interface between the active layer and ITO electrode.

Keywords

EN

P₃HT:PCBM bulk heterojunction solar cell NiO anode buffer layer; PEDOT:PSS anode buffer layer

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 4
• Pages: 887-891

Dates

published

2018-04

Contributors

author

Jwayeon Kim

• Department of Materials Engineering, Hoseo University, Asan, Chungnam 336-795, Republic of Korea

author

Yongkyu Ko

• Department of Materials Engineering, Hoseo University, Asan, Chungnam 336-795, Republic of Korea

author

Kyeongsoon Park

• Faculty of Nanotechnology and Advanced Materials, Sejong University, Seoul 143-747, Republic of Korea

References

• [1] H.-L. Yip, S.K. Hau, N.S. Baek, A.K.-Y. Jen, Appl. Phys. Lett. 92, 193313-1 (2008) , doi: 10.1063/1.29195242
• [2] B.C. Thompson, J.M.J. Frechet, Chem. Int. Ed. 47, 58 (2008) , doi: 10.1002/anie.200702506
• [3] H.-K. Park, J.-W. Kang, S.-I. Na, D.-Y. Kim, H.-K. Kim, Sol. Energy Mater. Sol. Cells 93, 1994 (2009) , doi: 10.1016/j.solmat.2009.07.016
• [4] F.C. Krebs, T. Tromholt, M. Jorgensen, Nanoscale 2, 873 (2010) , doi: 10.1039/B9NR00430K
• [5] K. Kawano, R. Pacios, D. Poplavskyy, J. Nelson, D.D.C. Bradley, J.R. Durrant, Sol. Energy Mater. Sol. Cells 90, 3520 (2000) , doi: 10.1016/j.solmat.2006.06.041
• [6] V. Shrotriya, G. Li, Y. Yao, C-W. Chu, Y. Yang, Appl. Phys. Lett. 88, 073508 (2006) , doi: 10.1063/1.2174093
• [7] M.S. White, D.C. Olson, S.E. Shaheen, N. Kopidakis, D.S. Ginley, Appl. Phys. Lett. 89, 143517 (2006) , doi: 10.1063/1.2359579
• [8] K.X. Steirer, J.P. Chesin, N.E. Widjonarko, J.J. Berry, A. Miedaner, D.S. Ginley, D.C. Olson, Org. Electr. 11, 1414 (2010) , doi: 10.1016/j.orgel.2010.05.008
• [9] K. Ellmer, J. Phys. D Appl. Phys. 33, R17 (2000) , doi: 10.1088/0022-3727/33/4/201
• [10] S. Seo, M.J. Lee, D.H. Seo, E.J. Jeoung, D.-S. Suh, Y.S. Joung, I.K. Yoo, I.R. Hwang, S.H. Kim, I.S. Byun, J.-S. Choi, B.H. Park, Appl. Phys. Lett. 85, 5655 (2004) , doi: 10.1063/1.1831560
• [11] J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi B 15, 627 (1966) , doi: 10.1002/pssb.19660150224
• [12] R. Betancur, M. Maymo, X. Elias, L.T. Vuong, J. Martorell, Sol. Energy Mater. Sol. Cells 95, 735 (2011) , doi: 10.1016/j.solmat.2010.10.104
• [13] D.T. Nguyen, A. Ferrec, J. Keraudy, J.C. Bernede, N. Stephant, L. Cattin, P.-Y. Jouan, Appl. Surf. Sci. 311, 110 (2014) , doi: 10.1016/j.apsusc.2014.05.02010.1016/j.solmat.2010.10.104
• [14] N. Sun, G. Fang, P. Qin, Q. Zheng, M. Wang, X. Fan, F. Cheng, J. Wan, X. Zhao, Sol. Energy Mater. Sol. Cells 94, 2328 (2010) , doi: 10.1016/j.solmat.2010.08.002
• [15] N. Sun, G. Fang, P. Qin, Q. Zheng, M. Wang, X. Fan, F. Cheng, J. Wan, X. Zhao, Sol. Energy Mater. Sol. Cells 94, 2328 (2010) , doi: 10.1016/j.solmat.2010.08.002

Identifiers

DOI

10.12693/APhysPolA.131.887