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2018 | 133 | 4 | 811-815
Article title

Origin of Point Defects in β-Ga₂O₃ Single Crystals Doped with Mg²⁺ Ions

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EN
Abstracts
EN
Optical absorption and photoconductivity investigations of nominal pure and Mg²⁺ doped β-Ga₂O₃ single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg²⁺ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.
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EN
Contributors
author
  • Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine
author
  • Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine
author
  • Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine
author
  • Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine
References
  • [1] M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Phys. Status Solidi A 211, 21 (2014) , doi: 10.1002/pssa.201330197
  • [2] K. Sasaki, A. Kuramata, T. Masui, E.G. Villora, K. Shimamura, S. Yamakoshi, Appl. Phys. Expr. 5, 035502 (2012) , doi: 10.1143/APEX.5.035502
  • [3] M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Appl. Phys. Lett. 100, 013504 (2012) , doi: 10.1063/1.3674287
  • [4] M. Higashiwaki, K. Sasaki, T. Kamimura, M.H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi, Appl. Phys. Lett. 103, 123511 (2013) , doi: 10.1063/1.4821858
  • [5] K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi, IEEE Electron Dev. Lett. 34, 493 (2013) , doi: 10.1109/LED.2013.2244057
  • [6] H.H. Tippins, Phys. Rev. 140, A316 (1965) , doi: 10.1103/PhysRev.140.A316
  • [7] T. Matsumoto, M. Aoki, A. Kinoshita, T. Aono, Jpn. J. Appl. Phys. 13, P 1578 (1974)
  • [8] V. Vasyltsiv, Ya. Zakharko, Solid State Phys. 25, 131 (1983) (in Russian)
  • [9] L.N. Cojocaru, A. Prodan, Rev. Roum. Phys. 19, 209 (1974)
  • [10] Z. Galazka, R. Uecker, K. Irmscher, M. Albrecht, D. Klimm, M. Pietsch, M. Brützam, R. Bertram, S. Ganschow, R. Fornari, Cryst. Res. Technol. 45, 1229 (2010) , doi: 10.1002/crat.201000341
  • [11] V. Vasyltsiv, Ya. Zakharko, Ya. Rym, Ukr. J. Phys. 33, 1320 (1989) (in Russian)
  • [12] Z. Zhang, E. Farzana, A.R. Arehart, S.A. Ringel, Appl. Phys. Lett. 108, 052105 (2016) , doi: 10.1063/1.4941429
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv133n4p13kz
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