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2018 | 133 | 4 | 778-780
Article title

Hafnium Oxide as Efficient Material for a New Generation Dielectric

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EN
Abstracts
EN
In the early 2000-ies, world leaders in the field of computer engineering, such companies as IBM, Intel and Samsung Electronics announced the development of a new technology for the production of boards based on multilayer films HfO₂-Al₂O₃ on a silicon pad using the method of atomic layer deposition. The board has a high dielectric constant value thus making it possible to produce smaller transistors with increased operational speed, to reduce leakage current and electric energy consumption. It has been known that hafnium oxide is used in the production of optical devices, resistors, electronic ceramics, neutron absorption compositions, and catalysts. High purity of material is one of key conditions for its application. As source material, hafnium concentrate was used that was enriched to 10% in the form of K₂(ZrHf)F₆ salt - the product of fractional crystallization of zirconium and hafnium fluorides in the production of zirconium for nuclear applications. Another source material is a HFO₂ commercial-grade hafnium oxide produced at Vilnogorsk Mining and Smelting Works. Key process stages are fusion with alkali at a temperature of 800°C, dissolution in nitric acid and extraction. The impurities content of resultant hafnium re-extract is 10-5% (mass). The prime objective of the process technology is the preservation of hafnium purity in its oxide production, which is attained by the application of materials and equipment items having a high corrosion resistance, such as stainless steel, crucibles made of high-purity silicon, reaction vessels made of zirconium and fluoroplastic. Centrifugal extractors allow the key critical process of hafnium extraction purification to be sufficiently effective, resulting in obtaining the product of a required 99.99% purity. Physical properties of hafnium oxide are presented in sufficient detail in. Hafnium oxide can by produced using various methods to be selected based on the requirements to product quality, process efficiency and cost considerations.
Publisher

Year
Volume
133
Issue
4
Pages
778-780
Physical description
Dates
published
2018-04
Contributors
author
  • Chemical Technology of AISU, Kamyanske, Ukraine
  • Dniprodzerzhinsk State Technical University, 2 Dniprobudivska Str., 51900 Kamyanske, Ukraine
author
  • Dniprodzerzhinsk State Technical University, 2 Dniprobudivska Str., 51900 Kamyanske, Ukraine
References
  • [1] G. Reznik, Int. Rev. 48 12, 86 (2002)
  • [2] G.I. Kuznetsov, A.A. Pushkov, A.V. Kosogorov, Centrifugal Extractors Tsentrak, RCTU them. M. Mendeleyev, Moscow 2000
  • [3] I.A. Sheka, K.F. Karlysheva, Chemistry of Hafnium, Naukova dumka, Kiev 1973, p. 154
  • [4] M. Benedikt, T. Pigford, Chemical Technology of Nuclear Materials (in Russian, translated from English), Izd-vo glavnogo upravleniya po ispol'zovaniyu atomnoy energii pri sovete ministrov USSR, Moscow 1960, pp. 295, 333
  • [5] A.P. Mukhachev, et al., Copyright certificate No. 1655905 USSR Method of removing sediment of dibutyl phosphates of zirconium and hafnium from 15.02.1991
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv133n4p05kz
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