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2018 | 133 | 3 | 624-627
Article title

Hydrogen Absorption in Gd Thin Films

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EN
Abstracts
EN
In this contribution we have studied an initial hydrogen absorption in Gd thin films using in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ standard X-ray diffraction. As an initial hydrogen absorption indicator we have used broadening of the Gd-4f peak. The Gd thin films with a thickness of 200 nm were deposited at room temperature (RT) using UHV RF magnetron sputtering. As a substrate we have used naturally oxidised Si(100) wafers with 20 nm - Pd buffer layer. Furthermore, hydrogen absorption kinetics under a pressure of 100 mbar in Pd covered 200 nm Gd thin film was studied at RT using four-point resistivity measurements.
Keywords
EN
Year
Volume
133
Issue
3
Pages
624-627
Physical description
Dates
published
2018-03
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv133n3p088kz
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