Structure and Magnetism of LSMO/BTO/MgO/LSMO Multilayers

• Authors: J. Pawlak , A. Żywczak , G. Szwachta , J. Kanak , M. Gajewska , M. Przybylski
• Languages of publication: EN

Abstracts

EN

A multiferroic tunnel junction (MFTJ) is a promising device for future memory systems with discrete and different logic states which are controlled by a combination of electric and magnetic fields. The goal of ongoing research is to present ferroelectric and ferromagnetic properties, especially at room temperature (RT), represented as high values of tunnel electroresistance (TER) and tunnel magnetoresistance (TMR). A key aspect is the appropriate preparation of a sample allowing epitaxial growth. The thin layers were prepared by pulsed laser deposition on atomically smooth monocrystalline SrTiO₃ (STO) substrates. The ferromagnetic metal layers La_{0.67}Sr_{0.33}MnO₃ (LSMO) are separated by a layer of a ferroelectric insulator - BaTiO₃ (BTO). The same structure of LSMO, BTO and STO (perovskite) and a similar lattice constant make it possible to obtain high-quality heterostructures. Magnetic measurements confirm differences in the magnetic coercivity of the top and bottom LSMO layer, which allows to obtain their parallel and antiparallel magnetization orientation. A modification of the interfaces of BTO by thin MgO layer enables an increase in the value of the TER effect.

Keywords

EN

75.60.Ej

Discipline

• 75.60.Ej: Magnetization curves, hysteresis, Barkhausen and related effects(for hysteresis in ferroelectricity, see 77.80.Dj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 3
• Pages: 548-551

Dates

published

2018-03

Contributors

author

J. Pawlak

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Kraków, Poland

author

A. Żywczak

• Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Kraków, Poland

author

G. Szwachta

• Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, Kraków, Poland

author

J. Kanak

• Department of Electronics, Faculty of Informatics, Electronics and Telecommunications, AGH University of Science and Technology, Kraków, Poland

author

M. Gajewska

• Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Kraków, Poland

author

M. Przybylski

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Kraków, Poland
• Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Kraków, Poland

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Identifiers

DOI

10.12693/APhysPolA.133.548