Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

• Authors: A. Banaszak-Piechowska , K. Paprocki , K. Fabisiak , A. Dudkowiak , M. Szybowicz , E. Staryga
• Languages of publication: EN

Abstracts

EN

The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ₃₀₀), current-voltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ₃₀₀ and I-V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ₃₀₀ ≈0.1-1 μS/cm. The I-V characteristics in these layers show space charge limited conduction behavior with I ~ V² in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.

Keywords

EN

61.05.cp; 81.05.ug; 73.50.Gr; 73.61.-r

Discipline

• 61.05.cp: X-ray diffraction
• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths
• 81.05.ug: Diamond

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 4
• Pages: 1411-1414

Dates

published

2017-10

received

2017-06-20

(unknown)

2017-07-05

Contributors

author

A. Banaszak-Piechowska

• Institute of Physics, Kazimierz Wielki University, Powstańców Wielkopolskich 2, 85-090 Bydgoszcz, Poland

author

K. Paprocki

• Institute of Physics, Kazimierz Wielki University, Powstańców Wielkopolskich 2, 85-090 Bydgoszcz, Poland

author

K. Fabisiak

• Institute of Physics, Kazimierz Wielki University, Powstańców Wielkopolskich 2, 85-090 Bydgoszcz, Poland

author

A. Dudkowiak

• Faculty of Technical Physics, PUT, Piotrowo 3, 60-965 Poznań, Poland

author

M. Szybowicz

• Faculty of Technical Physics, PUT, Piotrowo 3, 60-965 Poznań, Poland

author

E. Staryga

• Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.1411