Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors

• Authors: R. Remmouche , R. Fates , H. Bouridah
• Languages of publication: EN

Abstracts

EN

This paper presents an analytical model calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors by considering a granular morphology of silicon nanocrystallites forming the channel and using the two-dimensional the Poisson equation. The numerical calculations demonstrate that, according to the quantum size effects on both dielectric constant and band gap, the threshold voltage values are strongly related to the silicon crystallites structure. To justify the validity of our model suitable for implementation in circuit simulators such as SPICE, the simulation results obtained are compared with the available research data and they shows a satisfactory match, thus, demonstrating the validity of our model.

Keywords

EN

68.55.J-; 73.20.At; 73.40.Ty; 73.63.Bd

Discipline

• 73.63.Bd: Nanocrystalline materials
• 68.55.J-: Morphology of films
• 73.20.At: Surface states, band structure, electron density of states
• 73.40.Ty: Semiconductor-insulator-semiconductor structures

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 4
• Pages: 1230-1233

Dates

published

2017-10

received

2016-04-28

(unknown)

2017-09-19

Contributors

author

R. Remmouche

• Department of Electronics, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
• LEM Laboratory, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

author

R. Fates

• Department of Electronics, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
• LEM Laboratory, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

author

H. Bouridah

• Department of Electronics, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
• LEM Laboratory, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

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Identifiers

DOI

10.12693/APhysPolA.132.1230