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2017 | 132 | 4 | 1230-1233
Article title

Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors

Content
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EN
Abstracts
EN
This paper presents an analytical model calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors by considering a granular morphology of silicon nanocrystallites forming the channel and using the two-dimensional the Poisson equation. The numerical calculations demonstrate that, according to the quantum size effects on both dielectric constant and band gap, the threshold voltage values are strongly related to the silicon crystallites structure. To justify the validity of our model suitable for implementation in circuit simulators such as SPICE, the simulation results obtained are compared with the available research data and they shows a satisfactory match, thus, demonstrating the validity of our model.
Keywords
Publisher

Year
Volume
132
Issue
4
Pages
1230-1233
Physical description
Dates
published
2017-10
received
2016-04-28
(unknown)
2017-09-19
Contributors
author
  • Department of Electronics, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
  • LEM Laboratory, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
author
  • Department of Electronics, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
  • LEM Laboratory, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
author
  • Department of Electronics, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
  • LEM Laboratory, Jijel University, B.P. 98, Ouled Aissa, Jijel 18000, Algeria
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n4p03kz
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