Synthesis and Characterization of Manganese Sulphide Thin Films by Chemical Bath Deposition Method

• Authors: G. Geetha , P. Murugasen , S. Sagadevan
• Languages of publication: EN

Abstracts

EN

Manganese sulphide (MnS) thin films were prepared by chemical bath deposition method. X-ray diffraction analysis was used to study the structure and the crystallite size of MnS thin films. The grain size and the surface morphology were studied using scanning electron microscopy. The optical properties were studied using the UV-visible absorption spectrum. The dielectric properties of MnS thin films were studied for different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or the Penn gap, the Fermi energy and electronic polarizability of the MnS thin films were calculated. The ac electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films.

Keywords

EN

MnS thin films; XRD; SEM; dielectric studies

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 4
• Pages: 1221-1226

Dates

published

2017-10

received

2015-11-10

(unknown)

2017-08-30

(unknown)

2017-09-15

Contributors

author

G. Geetha

• Research Scholar, Bharathiar University, Coimbatore, India

author

P. Murugasen

• Department of Physics, Saveetha Engineering, Chennai-600 123, India

author

S. Sagadevan

• Centre for Nanotechnology, AMET University, Chennai-603 112, India

References

• [1] S.H. Chaki, S.M. Chauhan, J.P. Tailor, M.P. Deshpande, J. Mater. Res. Technol. 6, 123 (2017), doi: 10.1016/j.jmrt.2016.05.003
• [2] D. Fan, X. Yang, H. Wang, Y. Zhang, H. Yan, Physica B 337, 165 (2003), doi: 10.1016/S0921-4526(03)00399-5
• [3] D. Sreekantha Reddy, D. Raja Reddy, B. Reddy, A. Mallikarjuna Reddy, K. Gunasekhar, P. Sreedhara Reddy, J. Optoelectron. Adv. Mater. 9, 2019 (2007) http://joam.inoe.ro/download.php?idu=760
• [4] S. Agbo, F. Ezema, Pacific J. Sci. Technol. 8, 150 (2007) http://akamaiuniversity.us/PJST8_1_150.pdf
• [5] A. Hannachi, S. Hammami, N. Raouafi, H. Maghraoui-Meherzi, J. Alloys Comp. 663, 507 (2016), doi: 10.1016/j.jallcom.2015.11.058
• [6] Y. Zhang, H. Wang, B. Wang, H. Yan, M. Yoshimura, J. Cryst. Growth 243, 214 (2002), doi: 10.1016/S0022-0248(02)01495-1
• [7] H. Pathan, S. Kale, C. Lokhande, S. Han, O. Joo, Mater. Res. Bull. 42, 1565 (2007), doi: 10.1016/j.materresbull.2006.11.017
• [8] C. Gumus, C. Ulutas, R. Esen, O. Ozkendir, Y. Ufuktepe, Thin Solid Films 492, 1 (2005), doi: 10.1016/j.tsf.2005.06.016
• [9] Dong Bo Fan, Hao Wang, Yong Cai Zhang, Jie Cheng, Hui Yan, Surf. Rev. Lett. 11, 27 (2004), doi: 10.1142/S0218625X04005895
• [10] S. Sagadevan, J. Podder, Soft Nanosci. Lett. 5, 55 (2015), doi: 10.4236/snl.2015.54007
• [11] S. Sagadevan, J. Non-Oxide Glasses 6, 47 (2014) http://chalcogen.ro/47_Suresh.pdf
• [12] G. Geetha, P. Murugasen, S. Sagadevan, Mater. Res. 19, 413 (2016), doi: 10.1590/1980-5373-MR-2015-0411
• [13] S. Thirumavalavan, K. Mani, S. Sagadevan, J. Ovonic Res. 11, 123 (2015) http://chalcogen.ro/123_Thirumavalavan.pdf
• [14] G. Geetha, P. Murugasen, S. Sagadevan, Mater. Res. 20, 62 (2017), doi: 10.1590/1980-5373-MR-2016-0441
• [15] N.M. Ravindra, R.P. Bharadwaj, K. Sunil Kumar, V.K. Srivastava, Infrared Phys. 21, 369 (1981), doi: 10.1016/0020-0891(81)90045-2
• [16] D.R. Penn, Phys. Rev. 128, 2093 (1962), doi: 10.1103/PhysRev.128.2093
• [17] N.M. Ravindra, V.K. Srivastava, Infrared Phys. 20, 67 (1980), doi: 10.1016/0020-0891(80)90009-3
• [18] M. Ravindran, V.K. Srivastava, Infrared Phys. 19, 605 (1979), doi: 10.1016/0020-0891(79)90081-2
• [19] S. Ahmad, M. Ashraf, A. Ahmad, D.V. Singh, Arab. J. Sci. Eng. 38, 1889 (2013), doi: 10.1007/s13369-013-0551-z
• [20] S. Thirumavalavan, K. Mani, S. Sagadevan, Chalcogenide Lett. 12, 237 (2015) http://chalcogen.ro/237_Thirumavalavan.pdf

Identifiers

DOI

10.12693/APhysPolA.132.1221