Design of Solar Cells p⁺/n Emitter by Spin-On Technique

• Authors: A. El Amrani , A. Boucheham , Y. Belkacem , R. Boufenik , M. Boudaa
• Languages of publication: EN

Abstracts

EN

In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p⁺/n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N₂/O₂ gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910°C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5× 10²⁰ atoms/cm³ and 2.5× 10²⁰ atoms/cm³, respectively. The junction depth was around 0.3 μm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 μm.

Keywords

EN

81.15.KK; 88.40.JJ; 85.40.Ry

Discipline

• 85.40.Ry: Impurity doping, diffusion and ion implantation technology

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 3
• Pages: 717-719

Dates

published

2017-09

Contributors

author

A. El Amrani

• Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon, Alger, BP No 140, Les 07 Merveilles, Algiers, Algeria

author

A. Boucheham

• Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon, Alger, BP No 140, Les 07 Merveilles, Algiers, Algeria

author

Y. Belkacem

• Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon, Alger, BP No 140, Les 07 Merveilles, Algiers, Algeria

author

R. Boufenik

• Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon, Alger, BP No 140, Les 07 Merveilles, Algiers, Algeria

author

M. Boudaa

• Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon, Alger, BP No 140, Les 07 Merveilles, Algiers, Algeria

References

• [1] J. Schmidt, A.G. Aberle, R. Hezel, Proc. 26th IEEE Photovoltaic Specialists Conf., Anaheim 1997, p. 13, doi: 10.1109/PVSC.1997.653914
• [2] S.W. Glunz, S. Rein, J.Y. Lee, W. Warta, J. Appl. Phys. 90, 2397 (2001), doi: 10.1063/1.1389076
• [3] International Technology Roadmap for Photovoltaic, 2013 Results, 5th ed., Rev. 1, 24 March 2014
• [4] M.A. Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, N.-P. Harder, Proc. 34th IEEE Photovoltaic Specialists Conf., Philadelphia 2009, p. 1556, doi: 10.1109/PVSC.2009.5411365
• [5] A. Yadav, G. Singh, R. Nekovei, R. Jeyakumar, Renew. Energ. 80, 80 (2015), doi: 10.1016/j.renene.2015.01.055
• [6] E. Arai, H. Nakamura, Y. Terunuma, J. Electrochem. Soc. 120, 980 (1973), doi: 10.1149/1.2403611
• [7] E. Dominguez, E. Lora-Tamayo, B. Blanchard, J. Bellanato, J. Electrochem. Soc. 125, 1521 (1978), doi: 10.1149/1.2131708
• [8] U. Pignatel, G. Queirolo, Thin Solid Films 67, 233 (1980), doi: 10.1016/0040-6090(80)90454-X
• [9] T.L. Aselage, J. Mater. Res. 13, 1786 (1997), doi: 10.1557/JMR.1998.0252
• [10] C. Kim, S. Park, Y. Kim, H. Park, S. Kim, H. Kim, Thin Solid Films 564, 253 (2014), doi: 10.1016/j.tsf.2014.05.038
• [11] B. Singha, C.S. Solanki, Semicond. Sci. Technol. 31, 035009 (2016), doi: 10.1088/0268-1242/31/3/035009
• [12] M.A. Kessler, T. Ohrdes, B. Wolpensinger, N.P. Harder, Semicond. Sci. Technol. 25, 055001 (2010), doi: 10.1088/0268-1242/25/5/055001
• [13] K. Ryu, C.J. Choi, A. Rohatgi, Y.W. Ok, Current Appl. Phys. 16, 497 (2016), doi: 10.1016/j.cap.2016.02.001
• [14] N.C. Bezir, I. Akkurt, N. Ozek, Energy Source A 32, 512 (2010), doi: 10.1080/15567030802624056
• [15] N.C. Bezir, I. Akkurt, N. Ozek, Energy Source A 32, 995 (2010), doi: 10.1080/15567030902937234
• [16] Z. Er, Acta Phys. Pol. A 130, 72 (2016), doi: 10.12693/APhysPolA.130.72
• [17] A.A. Jadallah, D.Y. Mahmood, Z. Er, Z.A. Abdulqaedr, Acta Phys. Pol. A 130, 434 (2016), doi: 10.12693/APhysPolA.130.434
• [18] Z. Er, Acta Phys. Pol. A 128, B-300 (2015), doi: 10.12693/APhysPolA.128.B-300
• [19] Z. Er, Acta Phys. Pol. A 128, B-477 (2015), doi: 10.12693/APhysPolA.128.B-477

Identifiers

DOI

10.12693/APhysPolA.132.717