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2017 | 132 | 3 | 638-641
Article title

Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

Content
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Languages of publication
EN
Abstracts
EN
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I-V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.
Keywords
EN
Contributors
  • Department of Physics, Faculty of Art and Science, Suleyman Demirel University, 32260 Isparta, Turkey
author
  • Department of Materials Science and Engineering, Faculty of Engineering, Afyon Kocatepe University, 03200 Afyonkarahisar, Turkey
author
  • Graduate School of Natural and Applied Sciences, Suleyman Demirel University, 32260 Isparta, Turkey
author
  • Department of Physics, Faculty of Art and Science, Ömer Halisdemir University, 51200 Nigde, Turkey
author
  • Department of Physics, Faculty of Art and Science, Suleyman Demirel University, 32260 Isparta, Turkey
author
  • Department of Physics, Faculty of Art and Science, Suleyman Demirel University, 32260 Isparta, Turkey
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n3p064kz
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