Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition

• Authors: F. Göde , İ. Kariper , E. Güneri , S. Ünlü
• Languages of publication: EN

Abstracts

EN

Indium sulfide (β-In₂S₃) thin films are synthesized by chemical bath deposition method using three different complexing agent volumes, triethanolamine (TEA) (0.30, 0.45, and 0.60 ml). The effect of complexing agent on the structural, morphological, optical and electrical properties of chemically deposited indium sulfide (β-In₂S₃) thin films have been investigated in this work. The characterization of the present films is carried out using X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and electrical measurements. The structure of the films is polycrystalline with a cubic phase of β-In₂S₃. Firstly, the band gap of the film decreases from 3.74 eV to 3.15 eV by adding 0.30 ml TEA. Then, it increases to 3.79 eV with increasing TEA. Nevertheless, previously, the refractive index of the films increases from 2.13 to 2.67 for the 0.30 mL TEA and then it decreases to the value of 2.11 with increasing TEA. Extinction coefficient, real and dielectric constant of the films are calculated using the absorption and transmittance spectra. Firstly, the electrical resistivity of the films decreases from 3.46×10⁸ Ω cm to 1.33×10⁷ Ω cm by adding 0.30 ml TEA. Then, it increases to the value of 2.16×10⁹ Ω cm with increasing TEA. Eventually, the more conductive film with worm-like morphology detected from the scanning electron microscopy is synthesized using 0.30 ml TEA. These results show that complexing agent has an important effect on the structural, morphological, optical and electrical properties of the deposited films.

Keywords

EN

scanning electron microscopy; thin film; optical constant; growth from solutions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 3
• Pages: 527-530

Dates

published

2017-09

Contributors

author

F. Göde

• Mehmet Akif Ersoy University, Physics Department, Burdur, Turkey

author

İ. Kariper

• Erciyes University, Primary Education Department, Kayseri, Turkey

author

E. Güneri

• Erciyes University, Primary Education Department, Kayseri, Turkey

author

S. Ünlü

• Mehmet Akif Ersoy University, Physics Department, Burdur, Turkey

References

• [1] M.A. Mughal, R. Engelken, R. Sharma, Sol. Energy 120, 131 (2015), doi: 10.1016/j.solener.2015.07.028
• [2] N. Khooshsirat, N.A. Md Yunus, J. Electron. Mater. 45, 5721 (2016), doi: 10.1007/s11664-016-4744-6
• [3] Zhao Yang Zhong, Eou Sik Cho, Sang Jik Kwon, Thin Solid Films 547, 22 (2013), doi: 10.1016/j.tsf.2013.05.071
• [4] X. Zhang, C. Shao, X. Li, N. Lu, K. Wang, F. Miao, Y. Liu, J. Hazard. Mater. 283, 599 (2015), doi: 10.1016/j.jhazmat.2014.10.005
• [5] M. Pomaska, R. Sáez-Araoz, A. Steigert, Y.P. Fu, F. Hergert, I. Lauermann, Th. Dittrich, M.Ch. Lux-Steiner, Ch.-H. Fischer, Sol. Energy Mater. Sol. Cells 132, 303 (2015), doi: 10.1016/j.solmat.2014.08.044
• [6] S.S. Wang, F.J. Shiou, C.C. Tsao, S.W. Huang, C.Y. Hsu, Mater. Sci. Semicond. Proc. 16, 1879 (2013), doi: 10.1016/j.mssp.2013.06.012
• [7] T. Sall, B.M. Soucase, M. Mollar, B. Hartitti, M. Fahoume, J. Phys. Chem. Solids 76, 100 (2015), doi: 10.1016/j.jpcs.2014.08.007
• [8] W. Xiang, H. Zhao, J. Zhong, H. Luo, X. Zhao, Z. Chen, X. Liang, X. Yang, J. Alloys Comp. 553, 135 (2013), doi: 10.1016/j.jallcom.2012.11.133
• [9] X. Meng, Y. Lu, X. Zhang, B. Yang, G. Yi, J. Jia, Appl. Surf. Sci. 258, 649 (2011), doi: 10.1016/j.apsusc.2011.07.036
• [10] S. Kirtay, Acta. Phys. Pol. A 128, B-90 (2015), doi: 10.12693/APhysPolA.128.B-90
• [11] İ. Karahan, Acta. Phys. Pol. A 128, B-432 (2015), doi: 10.12693/APhysPolA.128.B-432
• [12] N. Çiçek Bezir, A. Evcin, R. Kayali, M. Kaşikçi Özen, K. Esen, E.B. Cambaz, Acta. Phys. Pol. A 130, 300 (2016)), doi: 10.12693/APhysPolA.130.300)
• [13] I.N. Qureshi, M. Shahid, A.N. Khan, Acta. Phys. Pol. A 128, B-314 (2015), doi: 10.12693/APhysPolA.128.B-314
• [14] W. Laslounia, M. Azzaz, Acta. Phys. Pol. A 130, 112 (2016), doi: 10.12693/APhysPolA.130.112
• [15] Y. Si Ahmed, T. Hadjersi, R. Chaoui, Acta. Phys. Pol. A 130, 385 (2016), doi: 10.12693/APhysPolA.130.385
• [16] M. Amlouk, M.A. Ben Said, N. Kamoun, S. Belgacem, N. Brunet, D. Barjon, Jpn. J. Appl. Phys. 38, 26 (1999), doi: 10.1143/JJAP.38.26
• [17] N.F. Mott, E.A. Davis, Electronic Process in Non-Crystalline Materials, Clarendon, Oxford 1979
• [18] Optical Properties of Solids, Ed. F. Abeles, North-Holland, London 1972
• [19] A. Timoumi, H. Bouzouita, Int. J. Renew. Energy Technol. Res. 2, 188 (2013)
• [20] T.T. John, C.S. Kartha, K.P. Vijayakumar, T. Abe, Y. Kashiwaba, Vacuum 80, 870 (2006), doi: 10.1016/j.vacuum.2005.11.046
• [21] P.M.R. Kumar, T.T. John, C.S. Kartha, K.P. Vijayakumar, T. Abe, Y. Kashiwaba, J. Mater. Sci. 41, 5519 (2006), doi: 10.1007/s10853-006-0307-1
• [22] P. Rao, S. Kumar, Thin Solid Films 524, 93 (2012), doi: 10.1016/j.tsf.2012.09.070

Identifiers

DOI

10.12693/APhysPolA.132.527