Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers

• Authors: D. Głowienka , J. Szmytkowski
• Languages of publication: EN

Abstracts

EN

The role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a great influence on the range and the rising time of the photocurrent.

Keywords

EN

71.35.-y; 73.50.-h; 73.50.Pz

Discipline

• 71.35.-y: Excitons and related phenomena
• 73.50.Pz: Photoconduction and photovoltaic effects
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)

• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 397-400

Dates

published

2017-08

Contributors

author

D. Głowienka

• Faculty of Applied Physics and Mathematics, Gdańsk University of Technology G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

J. Szmytkowski

• Faculty of Applied Physics and Mathematics, Gdańsk University of Technology G. Narutowicza 11/12, 80-233 Gdańsk, Poland

References

• [1] P.W.M. Blom, V.D. Mihailetchi, L.J.A. Koster, D.E. Markov, Adv. Mater. 19, 1551 (2007), doi: 10.1002/adma.200601093
• [2] P. Peumans, A. Yakimov, S.R. Forrest, J. Appl. Phys. 104, 3693 (2003), doi: 10.1063/1.1534621
• [3] A.J. Ferguson, N. Kopidakis, S.E. Shaheen, G. Rumbles, J. Phys. Chem. C 112, 9865 (2008), doi: 10.1021/jp7113412
• [4] I.A. Howard, J.M. Hodgkiss, X. Zhang, K.R. Kirov, H.A. Bronstein, C.K. Williams, R.H. Friend, S. Westenhoff, N.C. Greenham, J. Am. Chem. Soc. 132, 328 (2010), doi: 10.1021/ja908046h
• [5] J. Szmytkowski, Phys. Status Solidi RRL 6, 300 (2012), doi: 10.1002/pssr.201206231
• [6] B. Verreet, A. Bhoolokam, A. Brigeman, R. Dhanker, D. Cheyns, P. Heremans, A. Stesmans, N.C. Giebink, B.P. Rand, Phys. Rev. B 90, 115304 (2014), doi: 10.1103/PhysRevB.90.115304
• [7] I. Hwang, C.R. Mcneill, N.C. Greenham, J. Appl. Phys. 106, 094506 (2009), doi: 10.1063/1.3247547
• [8] Z.S. Wang, W.E.I. Sha, W.C.H. Choy, J. Appl. Phys. 120, 213101 (2016), doi: 10.1063/1.4970958
• [9] C.L. Braun, J. Chem. Phys. 80, 4157 (1984), doi: 10.1063/1.447243
• [10] D.L. Scharfetter, H.K. Gummel, IEEE Trans. Electron. Dev. 16, 64 (1969), doi: 10.1109/T-ED.1969.16566
• [11] I. Hwang, N.C. Greenham, Nanotechnology 19, 424012 (2008), doi: 10.1088/0957-4484/19/42/424012

Identifiers

DOI

10.12693/APhysPolA.132.397