InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

• Authors: P. Mrowiński , Ł. Dusanowski , A. Somers , S. Höfling , J. Reithmaier , J. Misiewicz , G. Sęk
• Languages of publication: EN

Abstracts

EN

In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300± 40 nm spectral range, i.e. the O-band of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in a high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.

Keywords

EN

photoluminescence; quantum dash; excitonic complexes; antibunching; autocorrelation; single photon source; telecommunication; time-resolved

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 382-386

Dates

published

2017-08

Contributors

author

P. Mrowiński

• OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland

author

Ł. Dusanowski

• OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland
• Technische Physik & W.C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Germany

author

A. Somers

• Technische Physik & W.C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Germany

author

S. Höfling

• Technische Physik & W.C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Germany
• School of Physics and Astronomy, University of St. Andrews, St. Andrews, United Kingdom

author

J. Reithmaier

• Institute of Nanostructure Technologies and Analytics, Technische Physik, Universität Kassel, Germany
• Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

author

J. Misiewicz

• OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland

author

G. Sęk

• OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.382