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2017 | 132 | 2 | 382-386
Article title

InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

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EN
Abstracts
EN
In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300± 40 nm spectral range, i.e. the O-band of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in a high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.
Publisher

Year
Volume
132
Issue
2
Pages
382-386
Physical description
Dates
published
2017-08
Contributors
author
  • OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland
  • OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland
  • Technische Physik & W.C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Germany
author
  • Technische Physik & W.C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Germany
author
  • Technische Physik & W.C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Germany
  • School of Physics and Astronomy, University of St. Andrews, St. Andrews, United Kingdom
author
  • Institute of Nanostructure Technologies and Analytics, Technische Physik, Universität Kassel, Germany
  • Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany
author
  • OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland
author
  • OSN Lab, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science Technology, Wrocław, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p47kz
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