Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

• Authors: J. Sito , M. Grodzicki , K. Lament , R. Wasielewski , P. Mazur , A. Ciszewski
• Languages of publication: EN

Abstracts

EN

The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.

Keywords

EN

81.07.Pr; 73.40.Ty; 79.60.-i

Discipline

• 81.07.Pr: Organic-inorganic hybrid nanostructures
• 73.40.Ty: Semiconductor-insulator-semiconductor structures
• 79.60.-i: Photoemission and photoelectron spectra(for photoelectron spectroscopy, see 87.64.ks in biological physics; 82.80.Pv in chemical analysis)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 357-360

Dates

published

2017-08

Contributors

author

J. Sito

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

M. Grodzicki

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

K. Lament

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

R. Wasielewski

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

P. Mazur

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

A. Ciszewski

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.357