Journal
Article title
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Abstracts
We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
Discipline
- 82.80.Pv: Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
- 68.47.Fg: Semiconductor surfaces
- 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)
Journal
Year
Volume
Issue
Pages
354-357
Physical description
Dates
published
2017-08
Contributors
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p38kz