PL EN


Preferences help
enabled [disable] Abstract
Number of results
2017 | 132 | 2 | 354-357
Article title

Ru/GaN(0001) Interface Properties

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
Keywords
EN
Contributors
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
References
  • [1] S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000)
  • [2] B. Morten, G. Ruffi, F. Sirotti, A. Tombesi, L. Moro, T. Akomolafe, J. Mater. Sci. Mater. Electron. 2, 46 (1991)
  • [3] G. Myburg, W.O. Barnard, W.E. Meyer, C.W. Louw, N.G. van den Berg, M. Hayes, F.D. Auret, S.A. Goodman, Appl. Surf. Sci. 70-71, 511 (1993)
  • [4] W. Macherzyński, A. Szyszka, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczala, in: ASDAM 2008 - Conf. Proc. 7th Int. Conf. on Advanced Semiconductor Devices and Microsystems, 2008, p. 187
  • [5] C.K. Ramesh, V.R. Reddy, K. Rao, J. Mater. Sci. Electron. 17, 999 (2006)
  • [6] M. Ťapajna, K. Hušeková, D. Machajdík, A.P. Kobzev, T. Schram, R. Lupták, L. Harmatha, K. Fröhlich, Microelectron. Eng. 83, 2412 (2006)
  • [7] T. Nabatame, K. Segawa, M. Kadoshima, H. Takaba, K. Iwamoto, S. Kimura, Y. Nunoshige, H. Satake, T. Ohishi, A. Toriumi, Mater. Sci. Semicond. Process. 9, 975 (2006)
  • [8] B. Vincent Crist, Handb. Elem. Nativ. Oxides 1, 1 (1999)
  • [9] J.R. Waldrop, R.W. Grant, Appl. Phys. Lett. 68, 2879 (1996)
  • [10] H.L. Skriver, N.M. Rosengaard, Phys. Rev. B 46, 7157 (1992)
  • [11] J.R. Waldrop, R.W. Grant, Y.C. Wang, R.F. Davis, J. Appl. Phys. 72, 4757 (1992)
  • [12] M. Grodzicki, P. Mazur, S. Zuber, J. Pers, J. Brona, A. Ciszewski, Appl. Surf. Sci. 304, 24 (2014)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p38kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.