Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
The electronic structure of n-type GaN(0001) surface and its modification by N⁺ ion bombardment are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Low-energy N⁺ ion bombardment, which was done using an ion gun at an energy of 200 eV, leads to nitriding of the surface. The process changes the surface stoichiometry and, consequently, provides formation of a disordered altered GaN layer. The calculated electron affinity of the clean n-GaN surface of 3.4 eV and band bending of 0.2 eV became changed after bombardment to 2.9 eV and 0.8 eV, respectively. The obtained difference in valence band maximum between the clean sample and the bombarded one was 0.6 eV.
Discipline
- 82.80.Pv: Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
- 68.47.Fg: Semiconductor surfaces
- 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)
Journal
Year
Volume
Issue
Pages
351-353
Physical description
Dates
published
2017-08
Contributors
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, Wrocław, Poland
References
- [1] A. Khan, Q. Chen, M.S. Shur, B.T. Dermott, J.A. Higgins, J. Burm, W.J. Schaff, L.F. Eastman, Solid-State Electron. 41, 1555 (1997), doi: 10.1016/S0038-1101(97)00104-4
- [2] S.J. Pearton, F. Ren, Adv. Mater. 12, 1571 (2000), doi: 10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO;2-T
- [3] M. Shur, R. Gaska, A. Khan, Mater. Sci. Forum 353-356, 807 (2001), doi: 10.4028/www.scientific.net/MSF.353-356.807
- [4] A.R. Smith, R.M. Feenstra, D.W. Greve, M.S. Shin, M. Skowronski, J. Neugebauer, J.E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998), doi: 10.1116/1.590156
- [5] M. Grodzicki, P. Mazur, S. Zuber, J. Brona, A. Ciszewski, Appl. Surf. Sci. 304, 20 (2014), doi: 10.1016/j.apsusc.2013.11.146
- [6] M. Grodzicki, P. Mazur, J. Pers, J. Brona, S. Zuber, A. Ciszewski, Appl. Phys. A 120, 1443 (2015), doi: 10.1007/s00339-015-9331-9
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p37kz