Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC

• Authors: K. Król , N. Kwietniewski , S. Gierałtowska , Ł. Wachnicki , M. Sochacki
• Languages of publication: EN

Abstracts

EN

The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).

Keywords

EN

81.16.Pr; 77.84.Bw; 77.55.dj

Discipline

• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
• 77.55.dj: For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)
• 81.16.Pr: Micro- and nano-oxidation(see also 82.37.Np Single molecule reaction kinetics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 329-331

Dates

published

2017-08

Contributors

author

K. Król

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

author

N. Kwietniewski

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-688 Warsaw, Poland

author

Ł. Wachnicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-688 Warsaw, Poland

author

M. Sochacki

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.329