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2017 | 132 | 2 | 329-331
Article title

Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC

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EN
Abstracts
EN
The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).
Keywords
EN
Contributors
author
  • Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
  • Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-688 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-688 Warsaw, Poland
author
  • Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p30kz
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