Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

• Authors: K. Michalczewski , F. Ivaldi , Ł. Kubiszyn , D. Benyahia , J. Boguski , A. Kębłowski , P. Martyniuk , J. Piotrowski , A. Rogalski
• Languages of publication: EN

Abstracts

EN

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

Keywords

EN

73.61.Ey; 73.25.+i; 82.45.Cc

Discipline

• 73.25.+i: Surface conductivity and carrier phenomena
• 73.61.Ey: III-V semiconductors
• 82.45.Cc: Anodic films

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 325-328

Dates

published

2017-08

Contributors

author

K. Michalczewski

• Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland

author

F. Ivaldi

• Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland

author

Ł. Kubiszyn

• Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland

author

D. Benyahia

• Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland

author

J. Boguski

• Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland

author

A. Kębłowski

• Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland

author

P. Martyniuk

• Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland

author

J. Piotrowski

• Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland

author

A. Rogalski

• Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.132.325