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2017 | 132 | 2 | 322-324
Article title

Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

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EN
Abstracts
EN
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Keywords
Contributors
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
author
  • Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
  • Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
author
  • Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
References
  • [1] A. Rogalski, P. Martyniuk, Infrared Phys. Technol. 48, 39 (2006), doi: 10.1016/j.infrared.2005.01.003
  • [2] M. Razeghi, B.-M. Nguyen, P.-Y. Delaunay, E.K.-W. Huang, S. Abdollahi Pour, P. Manurkar, S. Bogdanov, Proc SPIE 7467, 74670T (2009), doi: 10.1117/12.828421
  • [3] E.A. Plis, Adv. Electron. 2014, 1 (2014), doi: 10.1155/2014/246769
  • [4] G.A. Sai-Halasz, R. Tsu, L. Esaki, Appl. Phys. Lett. 30, 651 (1977), doi: 10.1063/1.89273
  • [5] D.L. Smith, C. Mailhiot, J. Appl. Phys. 62, 2545 (1987), doi: 10.1063/1.339468
  • [6] H.J. Haugan, F. Szmulowicz, G.J. Brown, K. Mahalingam, Appl. Phys. Lett. 84, 5410 (2004), doi: 10.1063/1.1767598
  • [7] C.H. Grein, P.M. Young, M.E. Flatté, H. Ehrenreich, J. Appl. Phys. 78, 7143 (1995), doi: 10.1063/1.360422
  • [8] H. Mohseni, V.I. Litvinov, M. Razeghi, Phys. Rev. B 58, 15378 (1998), doi: 10.1103/PhysRevB.58.15378
  • [9] A. Chandola, R. Pino, P.S. Dutta, Semicond. Sci. Technol. 20, 886 (2005), doi: 10.1088/0268-1242/20/8/046
  • [10] B.-M. Nguyen, D. Hoffman, E.K.-W. Huang, S. Bogdanov, P.-Y. Delaunay, M. Razeghi, M.Z. Tidrow, Appl. Phys. Lett. 94, 223506 (2009), doi: 10.1063/1.3148326
  • [11] B. Tang, Y.-Q. Xu, Z.-Q. Zhou, R.-T. Hao, G.-W. Wang, Z.-W. Ren, Z.-C. Niu, Chin. Phys. Lett. 26, 028102 (2009), doi: 10.1088/0256-307X/26/2/028102
  • [12] X.B. Zhang, J.H. Ryou, R.D. Dupuis, A. Petschke, S. Mou, S.L. Chuang, C. Xu, K.C. Hsieh, Appl. Phys. Lett. 88, 072104 (2006), doi: 10.1063/1.2168668
  • [13] E. Michel, H. Mohseni, J.D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mithcel, M. Ahoujja, Appl. Phys. Lett. 71, 1071 (1997), doi: 10.1063/1.119731
  • [14] S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, D.L. Huffaker, Appl. Phys. Lett. 88, 131911 (2006), doi: 10.1063/1.2172742
  • [15] D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski, Opto-Electron. Rev. 24, 1 (2016), doi: 10.1515/oere-2016-0007
  • [16] J.E. Ayers, J. Cryst. Growth 135, 71 (1994), doi: 10.1016/0022-0248(94)90727-7
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p28kz
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