Radiation Degradation of Bipolar Transistor Current Gain

• Authors: S. Miskiewicz , A. Komarov , F. Komarov , G. Zayats , S. Soroka
• Languages of publication: EN

Abstracts

EN

Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".

Keywords

EN

radiation   numerical simulation   bipolar transistors   lifetime   minority charge carriers   recombination   current gain  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 288-290

Dates

published

2017-08

References

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Identifiers

DOI

10.12693/APhysPolA.131.288