Radiation Degradation of Bipolar Transistor Current Gain

• Authors: S. Miskiewicz , A. Komarov , F. Komarov , G. Zayats , S. Soroka
• Languages of publication: EN

Abstracts

EN

Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".

Keywords

EN

radiation; numerical simulation; bipolar transistors; lifetime; minority charge carriers; recombination; current gain

• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 288-290

Dates

published

2017-08

Contributors

author

S. Miskiewicz

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

A. Komarov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

F. Komarov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

G. Zayats

• Institute of Mathematics, National Academy of Sciences of Belarus, 11 Surganov Str., 220072 Minsk, Belarus

author

S. Soroka

• Belmicrosystems, Integral, 121 Kazintsa Str., 220108 Minsk, Belarus

References

• [1] T.R. Oldham, IEEE NSREC Short Course Notebook, IEEE 2011
• [2] A.N. Belous, V.A. Solodukha, S.V. Shveda, Space Electronics, Technosphera, Moscow 2015
• [3] J.R. Strour, C.I. Marshall, P.W. Marshall IEEE Trans. Nucl. Sci. 30, 653 (2003), doi: 10.1109/TNS.2003.813197
• [4] A. Baschirotto, R. Castello, C. Onado, G. Pessina, P.G. Rancoita, A. Seidman Nucl. Instrum. Methods Phys. Res. B 122, 73 (1997), doi: 10.1016/S0168-583X(96)00640-4
• [5] S. Miskiewicz, F. Komarov, A. Komarov, P. Zhukowski, V. Michailov Przegląd Elektrotechniczny 92, 11 (2016) (in Polish), doi: 10.15199/48.2016.11.57
• [6] E. Vologdin, A. Lysenko, Radiation Resistance of the Bipolar Transistors, Moscow 2000
• [7] E. Vologdin, A. Lysenko, Integral Radiation Changes of Semiconductor Parameters, Moscow State Institute of Electronics and Mathematics, Moscow 1999
• [8] K. Zejeger, Physics of Semiconductors, Moscow 1977

Identifiers

DOI

10.12693/APhysPolA.131.288