PL EN


Preferences help
enabled [disable] Abstract
Number of results
2017 | 132 | 2 | 288-290
Article title

Radiation Degradation of Bipolar Transistor Current Gain

Content
Title variants
Languages of publication
EN
Abstracts
EN
Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".
Year
Volume
132
Issue
2
Pages
288-290
Physical description
Dates
published
2017-08
References
  • [1] T.R. Oldham, IEEE NSREC Short Course Notebook, IEEE 2011
  • [2] A.N. Belous, V.A. Solodukha, S.V. Shveda, Space Electronics, Technosphera, Moscow 2015
  • [3] J.R. Strour, C.I. Marshall, P.W. Marshall IEEE Trans. Nucl. Sci. 30, 653 (2003), doi: 10.1109/TNS.2003.813197
  • [4] A. Baschirotto, R. Castello, C. Onado, G. Pessina, P.G. Rancoita, A. Seidman Nucl. Instrum. Methods Phys. Res. B 122, 73 (1997), doi: 10.1016/S0168-583X(96)00640-4
  • [5] S. Miskiewicz, F. Komarov, A. Komarov, P. Zhukowski, V. Michailov Przegląd Elektrotechniczny 92, 11 (2016) (in Polish), doi: 10.15199/48.2016.11.57
  • [6] E. Vologdin, A. Lysenko, Radiation Resistance of the Bipolar Transistors, Moscow 2000
  • [7] E. Vologdin, A. Lysenko, Integral Radiation Changes of Semiconductor Parameters, Moscow State Institute of Electronics and Mathematics, Moscow 1999
  • [8] K. Zejeger, Physics of Semiconductors, Moscow 1977
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p20kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.