Radiation Degradation of Bipolar Transistor Current Gain

• Authors: S. Miskiewicz , A. Komarov , F. Komarov , G. Zayats , S. Soroka
• Languages of publication: EN

Abstracts

EN

Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".

Keywords

EN

radiation; numerical simulation; bipolar transistors; lifetime; minority charge carriers; recombination; current gain

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 288-290

Dates

published

2017-08

Contributors

author

S. Miskiewicz

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

A. Komarov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

F. Komarov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

G. Zayats

• Institute of Mathematics, National Academy of Sciences of Belarus, 11 Surganov Str., 220072 Minsk, Belarus

author

S. Soroka

• Belmicrosystems, Integral, 121 Kazintsa Str., 220108 Minsk, Belarus

References

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Identifiers

DOI

10.12693/APhysPolA.132.288