Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes

• Authors: P. Billewicz , P. Węgierek , T. Grudniewski , M. Turek
• Languages of publication: EN

Abstracts

EN

The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne⁺ ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.

Keywords

EN

61.72.uf; 71.55.Eq; 88.40.hj

Discipline

• 61.72.uf: Ge and Si
• 71.55.Eq: III-V semiconductors
• 88.40.hj: Efficiency and performance of solar cells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 274-277

Dates

published

2017-08

Contributors

author

P. Billewicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

T. Grudniewski

• Pope John Paul II State School of Higher Vocational Education, Sidorska 95/97, 21-500 Biała Podlaska, Poland

author

M. Turek

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

References

• [1] Y. Lee, C. Park, N. Balaji, Y.-J. Lee, V. A. Dao, Isr. J. Chem. 55, 1050 (2015), doi: 10.1002/ijch.201400210
• [2] A. Chandra, G. Anderson, S. Melkote, W. Gao, H. Haitjema, K. Wegener, CIRP Ann. Manufact. Technol. 63, 797 (2014), doi: 10.1016/j.cirp.2014.05.008
• [3] V. Benda, J. Eng. Sci. Technol. Rev. 7, 7 (2014).
• [4] C.-M. Lee, S.-P. Chang, S.-J. Chang, C.-I. Wu, Int. J. Electrochem. Sci. 8, 7634 (2013).
• [5] C.-M. Lee, S.-P. Chang, S.-J. Chang, C.-I. Wu, Int. J. Photoenergy 2012, 670981 (2012), doi: 10.1155/2012/670981
• [6] A. Rohatgi, D.L. Meier, B. McPherson, Y.-W. Ok, A.D. Upadhyaya, J.-H. Lai, F. Zimbardi, Energy Proced. 15, 10 (2012), doi: 10.1016/j.egypro.2012.02.002
• [7] P. Węgierek, P. Billewicz, Acta. Phys. Pol. A 128, 943 (2015), doi: 10.12693/APhysPolA.128.943
• [8] A. Luque, S. Hegedus, Handbook of Photovoltaic Science and Engineering, 2nd ed., Wiley, Chichester 2011
• [9] U.K. Das, S. Bowden, M. Lu, M.Z. Burrows, O. Jani, D. Xu, S.S. Hegedus, R.L. Opila, R.W. Birkmire, Progress towards High Efficiency All-Back-Contact Heterojunction c-Si Solar Cells, Institute of Energy Conversion, University of Delaware, Newark 2010
• [10] P. Węgierek, Electric Conduction in Strongly Defected Semiconductors Modified by Ion Implantation Technology, Lublin University of Technology, Lublin 2013
• [11] J. Olea, D. Pastor, A. del Prado, E. Garcia-Hemme, R. Garcia-Hernansanz, I. Martil, G. Gonzalez-Diaz, J. Appl. Phys. 114, 053110 (2013), doi: 10.1063/1.4817254
• [12] H. Castan, E. Perez, H. Garcia, S. Duenas, L. Bailon, J. Olea, D. Pastor, E. Garcia-Hemme, M. Irigoyen, G. Gonzalez-Diaz, J. Appl. Phys. 113, 024104 (2013), doi: 10.1063/1.4774241
• [13] J.T. Sullivan, C.B. Simmons, J.J. Krich, A.J. Akey, D. Recht, M.J. Aziz, T. Buonassisi, J. Appl. Phys. 114, 103701 (2013), doi: 10.1063/1.4820454
• [14] I. Umezu, J.M. Warrender, S. Charnvanichborikarn, A. Kohno, J.S. Williams, M. Tabbal, D.G. Papazoglou, X.-C. Zhang, M.J. Aziz, J. Appl. Phys. 113, 231501 (2013), doi: 10.1063/1.4804935
• [15] E. Perez, S. Duenas, H. Castan, H. Garcia, L. Bailon, D. Montero, R. Garcia-Hernansanz, E. Garcia-Hemme, J. Olea, G. Gonzalez-Diaz, J. Appl. Phys. 118, 245704 (2015), doi: 10.1063/1.4939198
• [16] P. Węgierek, P. Billewicz, Acta. Phys. Pol. A 123, 948 (2013), doi: 10.12693/APhysPolA.123.948
• [17] P. Węgierek, P. Billewicz, Acta. Phys. Pol. A 120, 122 (2011), doi: 10.12693/APhysPolA.120.122
• [18] O. Zinchuk, N. Drozdov, A. Fedotov, A. Mazanik, N. Krekotsen, V. Ukhov, J. Partyka, P. Węgierek, T. Kołtunowicz, Vacuum 83, S99 (2009), doi: 10.1016/j.vacuum.2009.01.035
• [19] J. Barbolla, S. Duenas, L. Bailon, Solid-State Electron. 35, 285 (1992), doi: 10.1016/0038-1101(92)90232-2
• [20] D.K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., Wiley, New Jersey 2006
• [21] J. Partyka, P.W. Żukowski, P. Węgierek, A. Rodzik, Yu.V. Sidorenko, Yu.A. Shostak, Semiconductors 36, 1326 (2002), doi: 10.1134/1.1529241

Identifiers

DOI

10.12693/APhysPolA.132.274