Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes

• Authors: P. Billewicz , P. Węgierek , T. Grudniewski , M. Turek
• Languages of publication: EN

Abstracts

EN

The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne⁺ ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.

Keywords

EN

61.72.uf; 71.55.Eq; 88.40.hj

Discipline

• 61.72.uf: Ge and Si
• 71.55.Eq: III-V semiconductors
• 88.40.hj: Efficiency and performance of solar cells

• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 274-277

Dates

published

2017-08

Contributors

author

P. Billewicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

T. Grudniewski

• Pope John Paul II State School of Higher Vocational Education, Sidorska 95/97, 21-500 Biała Podlaska, Poland

author

M. Turek

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.274